Abstract: The increasing scale and complexity of integrated circuits (ICs) necessitate accurate and efficient capacitance extraction methods to ensure signal and power integrity. This article ...
Abstract: This work presents an extraction method for the thermal resistance and the thermal capacitance of GaN power high-electron mobility transistors (HEMTs). An electro-thermal analytic model is ...
If you ignore power devices, it is not often that a new discrete semiconductor is announced, but today is one of those days – albeit for a lamented former low-noise n-channel JFET. “When NXP ...
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