A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
The promise of higher efficiency power conversion using GaN (Gallium Nitride) high electron mobility transistors (HEMT) has been achieved with devices now in volume production. This article will ...
Newly released 600 V H-Series power factor correction (PFC) rectifiers from Qspeed Semiconductor have even lower reverse recovery charge, reportedly providing the highest switching efficiency of any ...
In Part 1 of this article we discussed electric power basics and the need for and advantages of active power factor correction. The next question should be “Okay, then how does active PFC work?” ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced that its HiperPFS™-4 power ...
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