Semiconductor Engineering

Better Contact Resistance in Top-Gate CNFETs through Self-Aligned MoOx Nanoparticle Contact Doping (NYCU et al.)

A new technical paper titled “Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx ...
AZoNano

Self-Aligned Carbon Nanotube Phototransistors for Infrared Detection

The devices, which operate on a heterojunction-gated (HG) structure, demonstrate high responsivity and detectivity while maintaining a simplified fabrication process. This approach avoids the ...
NextBigFuture

UCLA team reports scalable fabrication of self-aligned 10-50 gigahertz graphene transistors, circuits

In September 2010, a UCLA research team reported that they had overcome some of these difficulties and were able to fabricate graphene transistors with unparalleled speed. These transistors used a ...
Science Daily

Chemists, engineers achieve world record with high-speed graphene transistors

Researchers have developed a new fabrication process for high-speed graphene transistors using a nanowire as the self-aligned gate. This new technique does not produce any appreciable defects in the ...