IMEC, the Belgium-based nanotechnology research center, announced at this week's VLSI Symposium that it has improved the performance of its planar CMOS using hafnium-based, high-k dielectrics and ...

LONDON — Belgian research organization IMEC has presented on a scheme to use fully-silicided (FUSI) nickel-silicide metal gates with high-k dielectric CMOS transistors at the International Electron ...

Since CMOS has been around for about 50 years, a comprehensive history would be a book. This blog focuses on what I consider the major transitions. Before CMOS, there was NMOS (also PMOS, but I have ...

Gordon Moore's prediction made over 40 years ago, that the number of transistors in an integrated circuit would double roughly every 24 months, continues to be the guiding principle of the ...

28nm Super Low Power is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. The 28nm process technology is slated to become the ...

The IC industry is headed toward a new era of scaling–and uncertainty–as chip makers race to develop the key building blocks for the next-generation transistor: high-k dielectrics and metal gates.

SYDNEY, AUSTRALIA – AUGUST 20, 2024 – Quantum computing company Diraq announced it has demonstrated consistent and repeatable operation with above 99 percent fidelity of two-qubit gates in the SiMOS ...

Texas Instrument's Richard Zarr reviews the differences between Silicon-Germanium BiCMOS and small-geometry CMOS when it comes to driving high-speed data transmission lines. The CMOS process was the ...