The 3.3-V IC is organized as 256 Kwords by 16 bits and comes in a 400-mil 44-lead TSOP package. Active read and write current values are 55 mA and 105 mA, typical standby current is 9 mA and, since it ...
NUREMBERG, Germany--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced the development of ...
Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading ...
New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025 CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies ...
A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such ...
CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc. (NASDAQ:MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions ...
Everspin Technologies today announced what it is calling the industry’s first Spin-Torque Magnetoresistive RAM (ST-MRAM) chip, which offers an alternative to non-volatile DRAM sub systems. Everspin ...
Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of persistent Magnetoresistive Random Access Memory (MRAM) solutions, today announced its newest ...
Samsung Electronics said on Thursday that it plans to expand the application of magnetoresistive RAM (MRAM). MRAM stores data in magnetic domains, unlike most RAMs that store them in electric charge ...
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