SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...
Sunnyvale, Calif. — Advanced Analogic Technologies released the AAT4285, a slew-rate-controlled load switch capable of supporting 12 V operation. By integrating level shift and slew rate control ...
The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
Over on YouTube [DENKI OTAKU] runs us through how a 4-pin MOSFET works and what the extra Kelvin source pin does. A typical MOSFET might come in a 3-pin TO-247 package, but there are 4-pin variants ...
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