PLAINVIEW, NY--(Marketwired - August 11, 2016) - Veeco Instruments Inc. (VECO) announced today that Epistar Corporation (TSE:2448) has ordered multiple TurboDisc® EPIK™ 700 Gallium Nitride (GaN) Metal ...
Dallas, Texas, Nov. 10, 2021 (GLOBE NEWSWIRE) -- The growing adoption of LED lighting, semiconductors, advanced packaging, and other technologies is further propelling the global MOCVD market. On the ...
LONDON--(BUSINESS WIRE)--Technavio has been monitoring the MOCVD market and it is poised to grow by USD 84.93 million during 2020-2024, progressing at a CAGR of over 5% during the forecast period. The ...
LONDON--(BUSINESS WIRE)--Technavio’s global MOCVD market research report projects the market to decelerate at a CAGR of around (3%) during the forecast period. The growing investment in autonomous ...
SHANGHAI, June 17, 2021 /PRNewswire/ -- Advanced Micro-Fabrication Equipment Inc. China (AMEC, SSE stock code: 688012), today announced the launch of the Prismo UniMax™ system (UniMax) – an advanced ...
TAIPEI, TAIWAN: US manufacturer Veeco and German company Aixtron that have long possessed China's LED epitaxal wafer MOCVD market, will be facing "war declarations" issued by Chinese manufacturers, ...
Veeco Instruments has transferred Allos Semiconductor's epitaxy technology onto its Propel Single-Wafer MOCVD system to enable micro LED production on existing silicon production lines. Save my User ...
PLAINVIEW, N.Y., Oct. 06, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (VECO) (NASDAQ: VECO) today announced the launch and first commercial multi-tool order for its new Lumina+ metal-organic ...
Veeco Instruments Inc. has introduced the new TurboDisc® EPIK700™ Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system that combines the industry’s highest productivity and ...
Veeco Instruments Inc. has purchased Emcore Corp.'s TurboDisc metal organic chemical vapor deposition (MOCVD) business for $60 million in cash, Veeco said today. Combined with Veeco's molecular beam ...
A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results