Expanding its portfolio of industry-leading RF power transistors, NXP Semiconductors, the independent semiconductor company founded by Philips, today launched its latest Laterally Diffused Metal Oxide ...
Continuing to push the boundaries of high-power radio frequency (RF) technology, Freescale Semiconductor has unveiled the world's first 50-volt LDMOS RF power transistor line-up for L-Band radar ...
M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...
The global Radio Frequency Gallium Nitride (RF GaN) market is poised for substantial growth, driven by advancements in telecommunications, defense, and satellite communications. GaN's superior ...
Developed for the wireless infrastructure market, the 30W 1920LD30 and 85W 1920LD85 lateral diffusion metal oxide semiconductor transistors (LDMOs) feature gold metalization and ESD protection ...
Toshiba Electronic Devices & Storage Corporation and Japan Semiconductor Corporation have together demonstrated a method for improving at the same time both the reliability and the performance of high ...
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