MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...

GlobalFoundries today accelerated its roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM offering will give customers the performance and power ...

In a major industry milestone, Samsung Electronics Co. Ltd. today announced that it has begun producing chips using its latest three-nanometer semiconductor manufacturing process. The process will ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

Logic semiconductor manufacturers plan to replace FinFET devices with Gate All Around at sub-3nm nodes. Applied Materials has introduced a complex seven chamber system with Atomic Layer Deposition as ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides ...

TSMC 3nm process node is the best FinFET technology and TSMC dominates semiconductor chip fabrication with higher transistor density, better yields on a mature technology and broad adoption by clients ...

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

We're about to enter a very unique era in the world of silicon fabrication. The currently-used FinFET transistors have been in use since 2011, but as nodes continue to shrink they will need to be ...