Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Researchers have realized a f_T/f_MAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume ...

Dublin, Nov. 30, 2023 (GLOBE NEWSWIRE) -- The "Insulated-Gate Bipolar Transistors (IGBT) - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. Global ...

Nexperia is extending its portfolio of products in the DPAK package to cover applications from 2 A to 8 A and from 45 V up to 100 V. The nine new power bipolar transistors added to the MJD series ...

Organic bipolar transistors can also handle demanding data processing and transmission tasks on flexible electronic elements - for example here, for electrocardiogram ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

In recent years, MOSFETs have benefited from huge investments in technology and promotion alike, overshadowing bipolar devices to the degree that many designers view bipolars as old technology.

The holiday gave me a chance to play with bipolar transistor mosfet drivers again. And things did not go quite as planned. I had been using the circuit on the right quite happily from a signal ...